? 2008 ixys corporation, all rights reserved genx3 tm 300v igbt IXGH120N30C3 (tab) high speed pt igbts for 50-150khz switching preliminary technical information v ces = 300v i c110 = 120a v ce(sat) 2.1v t fi (typ) = 86ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 300 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces 50 a v ge = 0v t j = 125 c 1.0 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 120a, v ge = 15v 1.75 2.10 v t j = 125 c 1.70 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 300 v v cgr t j = 25 c to 150 c, r ge = 1m 300 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c (chip capability) 120 a i cm t c = 25 c, 1ms 600 a i a t c = 25 c 120 a e as t c = 25 c 850 mj ssoa v ge = 15v, t vj = 125 c, r g = 2 i cm = 240 a (rbsoa) clamped inductive load @ 300v p c t c = 25 c 540 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g ds99850b(01/08) g c e to-247 ad (ixgh) g = gate, c = collector, e = emitter, tab = collector features z high frequency igbt z square rbsoa z high avalanche capability z drive simplicity with mos gate turn-on z high current handling capability applications z pfc circuits z pdp systems z switched-mode and resonant-mode converters and inverters z smps z ac motor speed control z dc servo and robot drives z dc choppers
ixys reserves the right to change limits, test conditions, and dimensions. IXGH120N30C3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, 50 83 s pulse test, t 300 s; duty cycle, d 2%. c ies 8700 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 715 pf c res 195 pf q g 230 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 32 nc q gc 87 nc t d(on) 28 ns t ri 37 ns e on 0.23 mj t d(off) 109 160 ns t fi 86 ns e off 0.73 1.3 mj t d(on) 28 ns t ri 38 ns e on 0.37 mj t d(off) 120 ns t fi 113 ns e off 0.88 mj r thjc 0.23 c/w r thck 0.21 c/w inductive load, t j = 125 c i c = 60a, v ge = 15v v ce = 200v, r g = 2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p inductive load, t j = 25 c i c = 60a, v ge = 15v v ce = 200v, r g = 2 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2008 ixys corporation, all rights reserved IXGH120N30C3 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 220 240 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 012345678910 v ce - volts i c - amperes v ge = 15v 11v 7v 9v 5v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 200 220 240 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 240a i c = 120a i c = 60a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 240a 120a 60a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 33.544.555.566.57 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH120N30C3 fig. 7. transconductance 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 240 280 50 100 150 200 250 300 350 v ce - volts i c - amperes t j = 125oc r g = 2 dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 240 q g - nanocoulombs v ge - volts v ce = 150v i c = 120a i g = 10 ma fig. 9. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res
? 2008 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2345678910 r g - ohms e off - millijoules 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 200v i c = 60a i c = 30a fig. 17. inductive turn-off switching times vs. junction temperature 40 50 60 70 80 90 100 110 120 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 100 105 110 115 120 125 130 135 140 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 , v ge = 15v v ce = 200v i c = 60a, 30a fig. 15. inductive turn-off switching times vs. gate resistance 60 70 80 90 100 110 120 130 140 150 2345678910 r g - ohms t f - nanoseconds 80 120 160 200 240 280 320 360 400 440 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 200v i c = 60a i c = 30a fig. 13. inductive swiching energy loss vs. collector current 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 30 40 50 60 70 80 90 i c - amperes e off - millijoules 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 e on - millijoules e off e on - - - - r g = 2 , v ge = 15v v ce = 200v t j = 125oc t j = 25oc fig. 14. inductive swiching energy loss vs. junction temperature 0 0.2 0.4 0.6 0.8 1 1.2 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.1 0.2 0.3 0.4 0.5 0.6 e on - millijoules e off e on - - - - r g = 2 , v ge = 15v v ce = 200v i c = 60a i c = 30a fig. 16. inductive turn-off switching times vs. collector current 40 60 80 100 120 140 160 30 40 50 60 70 80 90 i c - amperes t f - nanoseconds 105 110 115 120 125 130 135 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 , v ge = 15v v ce = 200v t j = 125oc t j = 25oc IXGH120N30C3
ixys reserves the right to change limits, test conditions, and dimensions. IXGH120N30C3 fig. 19. inductive turn-on switching times vs. collector current 10 20 30 40 50 60 70 30 40 50 60 70 80 90 i c - amperes t r - nanoseconds 23 25 27 29 31 33 35 t d(on) - nanoseconds t r t d(on) - - - - r g = 2 , v ge = 15v v ce = 200v t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 15 20 25 30 35 40 45 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 23 24 25 26 27 28 29 t d(on) - nanoseconds t r t d(on) - - - - r g = 2 , v ge = 15v v ce = 200v i c = 30a i c = 60a fig. 18. inductive turn-on switching times vs. gate resistance 15 20 25 30 35 40 45 50 55 60 2345678910 r g - ohms t r - nanoseconds 22 24 26 28 30 32 34 36 38 40 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 200v i c = 30a i c = 60a ixys ref: g_120n30c3(76)7-13-07
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